Electrical reliability of highly reliable 256M-bit mobile DRAM with top-edge round STI and dual gate oxide.
Chihoon LeeDonggun ParkHyeong Joon KimWonshik LeePublished in: Microelectron. Reliab. (2003)
Keyphrases
- highly reliable
- low voltage
- leakage current
- random access memory
- design considerations
- electrical properties
- mobile devices
- block cipher
- cmos technology
- mobile phone
- edge information
- mobile applications
- mobile learning
- power management
- embedded dram
- mobile networks
- edge detector
- s box
- high bandwidth
- context aware
- data management
- edge detection