Indirect fitting procedure to separate the effects of mobility degradation and source-and-drain resistance in MOSFET parameter extraction.
Adelmo Ortiz-CondeFrancisco J. García-SánchezJuan MuciDenise C. Lugo MuñozÁlvaro D. Latorre ReyChing-Sung HoJuin J. LiouPublished in: Microelectron. Reliab. (2009)
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