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Quantum-mechanical effects and gate leakage current of nanoscale n-type FinFETs: A 2d simulation study.
Weida Hu
Xiaoshuang Chen
Xuchang Zhou
Zhijue Quan
Wei Lu
Published in:
Microelectron. J. (2006)
Keyphrases
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simulation study
leakage current
silicon dioxide
low voltage
quantum mechanics
monte carlo
mechanical properties
electrical properties
image processing
real time
atomic force microscopy
low cost
cost effective
quantum computation