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Monte Carlo simulation of silicon amorphization during ion implantation.

Walter BohmayrAlexander BurenkovJürgen LorenzHeiner RysselSiegfried Selberherr
Published in: IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. (1998)
Keyphrases
  • monte carlo simulation
  • monte carlo
  • markov chain
  • low cost
  • high speed
  • high density
  • additive model
  • silicon dioxide
  • state space
  • semiconductor devices
  • gallium arsenide
  • dynamic programming