Implementation of high-k and metal gate materials for the 45nm node and beyond: gate patterning development.
S. BeckxM. DemandS. LocorotondoK. HensonM. ClaesV. ParaschivD. ShamiryanP. JaenenW. BoullartS. DegendtPublished in: Microelectron. Reliab. (2005)
Keyphrases
- cmos technology
- field effect transistors
- low power
- leakage current
- rapid prototyping
- neural network
- decision support
- case study
- wide range
- knowledge based systems
- real time
- future development
- development environment
- expert systems
- efficient implementation
- learning materials
- practical application
- current status
- architectural design
- core components
- power dissipation
- mechanical properties
- decision trees
- software engineering
- metal oxide