Login / Signup
Memristive devices fabricated with silicon nanowire schottky barrier transistors.
Davide Sacchetto
M. Haykel Ben Jamaa
Sandro Carrara
Giovanni De Micheli
Yusuf Leblebici
Published in:
ISCAS (2010)
Keyphrases
</>
field effect transistors
schottky barrier
semiconductor devices
high density
carbon nanotubes
steady state
cmos technology
mathematical analysis
high speed
low power
electron beam
neural network
markov chain
data center
databases
mobile devices
image sensor
dynamic programming