Very High Parallel-Plane Surface Electric Field of 4.3 MV/cm in Ga2O3 Schottky Barrier Diodes with PtOx Contacts.
Devansh SaraswatWenshen LiKazuki NomotoDebdeep JenaHuili Grace XingPublished in: DRC (2020)
Keyphrases
- schottky barrier
- electric field
- space charge
- three dimensional
- genetic algorithm ga
- genetic algorithm
- surface reconstruction
- d objects
- parallel genetic algorithm
- field effect transistors
- smooth surfaces
- virtual camera
- curved surfaces
- normal vectors
- evolutionary algorithm
- artificial neural networks
- multi objective
- high density
- gaussian curvature
- neural network
- small size
- shared memory
- vector field
- steady state
- simulated annealing