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Two 0.8 V, Highly Reliable RHBD 10T and 12T SRAM Cells for Aerospace Applications.

Aibin YanZhihui HeJing XiangJie CuiYong ZhouZhengfeng HuangPatrick GirardXiaoqing Wen
Published in: ACM Great Lakes Symposium on VLSI (2022)
Keyphrases
  • highly reliable
  • data transmission
  • power consumption
  • stem cell
  • manufacturing cell
  • random access memory
  • database
  • data sets
  • cellular automaton
  • microscopy images
  • web services composition
  • nasa langley research center