Comprehensive device and product level reliability studies on advanced CMOS technologies featuring 7nm high-k metal gate FinFET transistors.
D. S. HuangJ. H. LeeY. S. TsaiY. F. WangY. S. HuangC. K. LinRyan LuJun HePublished in: IRPS (2018)
Keyphrases
- metal oxide semiconductor
- cmos technology
- field effect transistors
- gate dielectrics
- gate insulator
- low cost
- integrated circuit
- low power
- silicon on insulator
- steady state
- power consumption
- high density
- image sensor
- nm technology
- high reliability
- mathematical analysis
- life cycle
- real time
- neural network
- product quality
- advanced technologies
- parallel processing
- hand held devices
- low voltage
- higher level
- empirical studies
- markov chain
- ultra low power