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High-temperature and high-field cycling reliability of PZT films embedded within 130 nm CMOS.
Grant Walters
Paul Chojecki
Alexandra Garraud
Toshikazu Nishida
Scott R. Summerfelt
J. A. Rodriguez
A. G. Acosta
Published in:
IRPS (2018)
Keyphrases
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high temperature
silicon dioxide
gate dielectrics
high reliability
wide range
low power
cmos technology
high speed
permalloy films
low cost
embedded systems
metal oxide
neural network
diesel engine
metal oxide semiconductor