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Fabrication of Junction Field-Effect Transistors on a Flexible Substrate by Using Hydrogenated Amorphous Silicon.
Nicola Lovecchio
Domenico Caputo
Giampiero de Cesare
Published in:
IWASI (2023)
Keyphrases
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semiconductor devices
field effect transistors
high density
electron beam
thin film
steady state
schottky barrier
magnetic recording
mathematical analysis
lightweight
integrated circuit
x ray
reinforcement learning
space charge
neural network
gallium arsenide
real time