-gate-dielectric select gates in vertical-channel three-dimensional (3D) NAND flash memory.
Bo WangBin GaoHuaqiang WuHe QianPublished in: Microelectron. Reliab. (2017)
Keyphrases
- flash memory
- three dimensional
- garbage collection
- solid state
- buffer management
- random access
- main memory
- file system
- embedded systems
- disk drives
- field effect transistors
- b tree
- multiple input
- database systems
- data storage
- silicon dioxide
- hand held devices
- storage systems
- high density
- storage devices
- small size
- memory management
- data structure
- gate dielectrics
- distributed databases
- multi dimensional
- leakage current