Research on the Gate Oxide Layer Aging Trend of Power Electronic Device.

Guoqing Xu Lingfeng Shao Weiwei Wei Yanhui Zhang Xuecheng Sun

Published in: IEEE Access (2021)

Keyphrases

silicon dioxide
field effect transistors
high density
steady state
high temperature
mathematical analysis
leakage current
power consumption
multi layer
application layer
control unit
bulletin board
space charge
electronic documents
fuel cell
data sets
power management
markov chain