Gain-Cell CIM: Leakage and Bitline Swing Aware 2T1C Gain-Cell eDRAM Compute in Memory Design with Bitline Precharge DACs and Compact Schmitt Trigger ADCs.
Shanshan XieCan NiPulkit JainFatih HamzaogluJaydeep P. KulkarniPublished in: VLSI Technology and Circuits (2022)