Dual-gate silicon carbide (SiC) lateral nanoelectromechanical switches.
Tina HeRui YangSrihari RajgopalSwarup BhuniaMehran MehreganyPhilip X.-L. FengPublished in: NEMS (2013)
Keyphrases
- silicon dioxide
- field effect transistors
- cmos technology
- high density
- low cost
- gate dielectrics
- leakage current
- steady state
- space charge
- databases
- high speed
- database
- primal dual
- dual formulation
- information systems
- metal oxide semiconductor
- search algorithm
- low power
- decision trees
- knowledge base
- computer vision
- machine learning
- real time