STI and eSiGe source/drain epitaxy induced stress modeling in 28 nm technology with replacement gate (RMG) process.
Doyoung JangMarie Garcia BardonDmitry YakimetsKenichi MiyaguchiAn De KeersgieterThomas ChiarellaRomain RitzenthalerMorin DehanAbdelkarim MerchaPublished in: ESSDERC (2013)
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