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Dependence of SiO2 Gate Leakage Current on Annealing Temperature of Solution Processed Tin Oxide Semiconductor.
Wun-Ciang Jhang
Pin-Han Chen
Chih-Chieh Hsu
Published in:
ICCE-TW (2022)
Keyphrases
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silicon dioxide
leakage current
high temperature
space charge
electrical properties
low voltage
silicon nitride
image processing
optimal solution
learning environment