A 7Mb STT-MRAM in 22FFL FinFET Technology with 4ns Read Sensing Time at 0.9V Using Write-Verify-Write Scheme and Offset-Cancellation Sensing Technique.
Liqiong WeiJuan G. AlzateUmut ArslanJustin BrockmanNilanjan DasKevin FischerTahir GhaniOleg GolonzkaPatrick HentgesRawshan JahanPulkit JainBlake C. LinMesut MeterelliyozJim O'DonnellConor PulsPedro A. QuinteroTanaya SahuMeenakshi SekharAjay VangapatyChris WiegandFatih HamzaogluPublished in: ISSCC (2019)