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Back-Gated Phototransistor Fabricated from Low Temperature InP Grown Directly on Amorphous Gate Oxide.

Debarghya SarkarSizhe WengYunpeng XuFrank GreerRehan Kapadia
Published in: DRC (2019)
Keyphrases
  • high speed
  • thin film
  • cmos technology
  • silicon dioxide
  • field effect transistors
  • markov chain
  • leakage current
  • neural network
  • image acquisition
  • electron microscopy
  • electron beam