Record Transconductance in Leff~30 nm Self-Aligned Replacement Gate ETSOI nFETs Using Low EOT Negative Capacitance HfO2-ZrO2 Superlattice Gate Stack.
Li-Chen WangW. LiNirmaan ShankerSuraj S. CheemaShang-Lin HsuS. VolkmanU. SikderC. GargJ.-H. ParkY.-H. LiaoY.-K. LinChenming HuSayeef S. SalahuddinPublished in: VLSI Technology and Circuits (2023)