A 3.8 GHz 153 Mb SRAM Design With Dynamic Stability Enhancement and Leakage Reduction in 45 nm High-k Metal Gate CMOS Technology.
Fatih HamzaogluKevin ZhangYih WangHong Jo AhnUddalak BhattacharyaZhanping ChenYong-Gee NgAndrei PavlovKen SmitsMark BohrPublished in: IEEE J. Solid State Circuits (2009)