A 16 nm 128 Mb SRAM in High-κ Metal-Gate FinFET Technology With Write-Assist Circuitry for Low-VMIN Applications.
Yen-Huei ChenWei-Min ChanWei-Cheng WuHung-Jen LiaoKuo-Hua PanJhon-Jhy LiawTang-Hsuan ChungQuincy LiChih-Yung LinMu-Chi ChiangShien-Yang WuJonathan ChangPublished in: IEEE J. Solid State Circuits (2015)
Keyphrases
- cmos technology
- nm technology
- power consumption
- low power
- leakage current
- low voltage
- high levels
- significantly lower
- parallel processing
- high sensitivity
- wide range
- metal oxide
- high correlation
- times faster
- field effect transistors
- high noise
- metal oxide semiconductor
- embedded dram
- cost effective
- computer systems
- case study
- small size
- power dissipation
- high density
- image sensor
- high rate
- inter frame
- power saving