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Growth and fabrication of AlGaN/GaN HEMT based on Si(1 1 1) substrates by MOCVD.

Weijun LuoXiaoliang WangHongling XiaoCuimei WangJunxue RanLunchun GuoJianping LiHongxin LiuYanling ChenFuhua YangJinmin Li
Published in: Microelectron. J. (2008)
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