Growth and fabrication of AlGaN/GaN HEMT based on Si(1 1 1) substrates by MOCVD.

Weijun Luo Xiaoliang Wang Hongling Xiao Cuimei Wang Junxue Ran Lunchun Guo Jianping Li Hongxin Liu Yanling Chen Fuhua Yang Jinmin Li

Published in: Microelectron. J. (2008)

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