Insights of VG-dependent threshold voltage fluctuations from dual-point random telegraph noise characterization in nanoscale transistors.
Xuepeng ZhanJiezhi ChenZhigang JiPublished in: Sci. China Inf. Sci. (2022)
Keyphrases
- stochastic resonance
- random noise
- noise model
- signal to noise ratio
- data mining
- high density
- power system
- neural network
- field effect transistors
- computational intelligence
- atomic force microscopy
- high voltage
- statistically independent
- measurement error
- electric field
- sampled data
- missing data
- low cost
- additive noise
- linear programming
- median filter
- integrated circuit
- noise level
- noisy data