Impact of Channel Doping and Gate Length on Small Signal Behaviour of Gate Electrode Workfunction Engineered Silicon Nanowire MOSFET at THz Frequency.
Neha GuptaAjay KumarRishu ChaujarPublished in: ISED (2014)
Keyphrases
- field effect transistors
- high density
- silicon dioxide
- steady state
- multiple input
- cmos technology
- mathematical analysis
- frequency spectrum
- band pass filters
- liquid crystal displays
- leakage current
- low power
- bandpass
- nano scale
- short time fourier transform
- signal detection
- frequency hopping
- non stationary
- signal processing
- low cost
- gate dielectrics
- weak signal
- power line
- received signal
- low voltage
- impulse response
- single channel
- multi channel
- low frequency
- high frequency
- high speed