A 55nm 0.55v 6T SRAM with variation-tolerant dual-tracking word-line under-drive and data-aware write-assist.
Yi-Wei LinHao-I YangGeng-Cing LinChi-Shin ChangChing-Te ChuangWei HwangChia-Cheng ChenWillis ShihHuan-Shun HuangPublished in: ISLPED (2012)