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Investigation of a Multizone Drift Doping Based Lateral Bipolar Transistor on Buried Oxide Thick Step.
Sajad Loan
S. Qureshi
S. Sundar Kumar Iyer
Published in:
World Congress on Engineering (Selected Papers) (2008)
Keyphrases
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field effect transistors
silicon dioxide
high speed
high density
leakage current
post processing
multi sensor
neural network
information retrieval
genetic algorithm
positive and negative
low power
preprocessing step
integrated circuit
mathematical analysis
electrical properties