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Enhanced degradation of n-MOSFETs with high-k/metal gate stacks under channel hot-carrier/gate-induced drain leakage alternating stress.

Dongwoo KimSeonhaeng LeeCheolgyu KimChiho LeeJeongsoo ParkBongkoo Kang
Published in: Microelectron. Reliab. (2012)
Keyphrases
  • field effect transistors
  • leakage current
  • steady state
  • high density
  • multiple input
  • low voltage
  • mathematical analysis
  • wide range
  • multi channel
  • data sets
  • significantly enhanced
  • nano scale