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Erosion defect formation in Ni-gate AlGaN/GaN high electron mobility transistors.
Patrick G. Whiting
M. R. Holzworth
A. G. Lind
Stephen J. Pearton
Kevin S. Jones
Lu Liu
T. S. Kang
Fan Ren
Y. Xin
Published in:
Microelectron. Reliab. (2017)
Keyphrases
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