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Reliability of Ferroelectric and Antiferroelectric Si: HfO2 materials in 3D capacitors by TDDB studies.

A. ViegasK. FalidasT. AliKati KühnelR. HoffmannClemens MartM. CzernohorskyJ. Heitmann
Published in: IRPS (2022)
Keyphrases
  • leakage current
  • metal oxide
  • artificial neural networks
  • literature review
  • reliability analysis
  • database
  • data mining
  • information systems
  • knowledge base