Assessing uniqueness and reliability of SRAM-based Physical Unclonable Functions from silicon measurements in 45-nm bulk CMOS.
Hidehiro FujiwaraMakoto YabuuchiKoji NiiPublished in: ISQED (2014)
Keyphrases
- cmos technology
- silicon on insulator
- low power
- power consumption
- low voltage
- leakage current
- metal oxide semiconductor
- gate dielectrics
- high speed
- low cost
- dynamic random access memory
- random access memory
- power dissipation
- parallel processing
- embedded dram
- transmission electron microscopy
- data transmission
- sufficient conditions
- real time
- image sensor
- physical world
- high resolution