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Photoluminescence properties of thin-film SiOxCy deposited by O-Cat CVD technique using MMS and TEOS.
Manmohan Jain
J. R. Ramos-Serrano
Ateet Dutt
Yasuhiro Matsumoto
Published in:
CCE (2020)
Keyphrases
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thin film
electron microscopy
chemical vapor deposition
silicon nitride
high density
film thickness
short circuit
multi layer
grain size
database systems
x ray