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Design considerations of a novel Triple Oxide Trench Deep Gate LDMOS to improve self-heating effect and breakdown voltage.
Amir Gavoshani
Ali A. Orouji
Published in:
IET Circuits Devices Syst. (2022)
Keyphrases
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leakage current
low voltage
design considerations
power line
random access memory
electrical properties
reinforcement learning
control system
pedagogical agents
silicon dioxide
gate insulator