A curvature-compensation technique based on the difference of Si and SiGe junction voltages for bandgap voltage circuits.
Yi HuangLi ZhuChun CheungLaleh NajafizadehPublished in: ISCAS (2014)
Keyphrases
- electric field
- solar cell
- space charge
- transmission line
- tunnel diode
- reactive power
- metal oxide
- power system
- operating conditions
- low voltage
- active power
- high speed
- differential geometry
- thin film
- mixed signal
- real time
- delay insensitive
- logic synthesis
- multiscale
- dual channel
- gallium arsenide
- logic circuits
- analog circuits
- digital circuits
- circuit design
- x ray