Login / Signup

A new fault current-sensing scheme for fast fault protection of the insulated gate bipolar transistor.

In-Hwan JiMin-Woo HaYoung-Hwan ChoiSeung-Chul LeeChong-Man YunMin-Koo Han
Published in: Microelectron. J. (2008)
Keyphrases
  • field effect transistors
  • fault diagnosis
  • fault detection
  • short circuit
  • high density
  • steady state
  • neural network
  • real time
  • positive and negative
  • protection scheme
  • sensor networks