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Ultra-Thin Si(1_x) Ge(x) Envelope Layer Induced Hole Quantum Well in Cylindrical Surrounding Gate p-FET with ITRS Considerations.
Nawaz Shafi
Ankita Porwal
Jaydeep Singh Parmaar
Aasif Mohammad Bhat
Chitrakant Sahu
C. Periasamy
Published in:
iSES (2019)
Keyphrases
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silicon dioxide
silicon nitride
leakage current
field effect transistors
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