The effects of unsymmetric matrix permutations and scalings in semiconductor device and circuit simulation.
Olaf SchenkStefan RöllinAnshul GuptaPublished in: IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. (2004)
Keyphrases
- field effect transistors
- semiconductor devices
- mathematical analysis
- steady state
- high density
- electron beam
- gallium arsenide
- simulation model
- real time
- simulation models
- simulation environment
- semiconductor manufacturing
- digital circuits
- positive definite
- simulation study
- low cost
- multi agent
- clustering algorithm
- data sets