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Effect of thin gate dielectrics on DC, radio frequency and linearity characteristics of lattice-matched AlInN/AlN/GaN metal-oxide-semiconductor high electron mobility transistor.

Kanjalochan JenaRaghunandan SwainTrupti Ranjan Lenka
Published in: IET Circuits Devices Syst. (2016)
Keyphrases
  • radio frequency
  • electrical properties
  • gate insulator
  • leakage current
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