Login / Signup
Trupti Ranjan Lenka
ORCID
Publication Activity (10 Years)
Years Active: 2016-2023
Publications (10 Years): 6
Top Topics
Noise Model
Gate Insulator
Solar Cell
Top Venues
IET Circuits Devices Syst.
IECON
ISCAS
</>
Publications
</>
G. Purnachandra Rao
,
Trupti Ranjan Lenka
,
Hieu Pham Trung Nguyen
Performance Analysis of Gate Engineered III-Nitride/ $\beta$-Ga2O3 Nano-HEMT for High-Power Nanoelectronics.
ISCAS
(2023)
Samadrita Das
,
Trupti Ranjan Lenka
,
Fazal Ahmed Talukdar
,
Hieu Pham Trung Nguyen
Design of Deep-UV Nanowire LED with Al2O3 Quantum Dots and Step-Graded n-Type AlInGaN Electron Blocking Layer for High Quantum Efficiency.
IECON
(2023)
Nour El I. Boukortt
,
Alamera Nouran Alquennah
,
Amal M. AlAmri
,
Salvatore Patanè
,
Trupti Ranjan Lenka
,
Rabin Paul
Photogeneration losses from interface trap density in Passivated Ultrathin CIGS Solar Cell.
IECON
(2022)
Deepak Kumar Panda
,
Rajan Singh
,
Trupti Ranjan Lenka
,
Thi Tan Pham
,
Ravi Teja Velpula
,
Barsha Jain
,
Ha Quoc Thang Bui
,
Hieu Pham Trung Nguyen
Single and double-gate based AlGaN/GaN MOS-HEMTs for the design of low-noise amplifiers: a comparative study.
IET Circuits Devices Syst.
14 (7) (2020)
Deepak Kumar Panda
,
Trupti Ranjan Lenka
Compact thermal noise model for enhancement mode N-polar GaN MOS-HEMT including 2DEG density solution with two sub-bands.
IET Circuits Devices Syst.
12 (6) (2018)
Kanjalochan Jena
,
Raghunandan Swain
,
Trupti Ranjan Lenka
Effect of thin gate dielectrics on DC, radio frequency and linearity characteristics of lattice-matched AlInN/AlN/GaN metal-oxide-semiconductor high electron mobility transistor.
IET Circuits Devices Syst.
10 (5) (2016)