Single and double-gate based AlGaN/GaN MOS-HEMTs for the design of low-noise amplifiers: a comparative study.
Deepak Kumar PandaRajan SinghTrupti Ranjan LenkaThi Tan PhamRavi Teja VelpulaBarsha JainHa Quoc Thang BuiHieu Pham Trung NguyenPublished in: IET Circuits Devices Syst. (2020)