Physical phenomena affecting performance and reliability of 4H-SiC bipolar junction transistors.
Peter G. MuzykovRobert M. KennedyQingchun ZhangCraig CapellAl BurkAnant AgarwalTangali S. SudarshanPublished in: Microelectron. Reliab. (2009)
Keyphrases
- physical phenomena
- high density
- mathematical models
- space charge
- image formation
- field effect transistors
- power consumption
- positive and negative
- reliability analysis
- electric field
- mathematical analysis
- low power
- artificial intelligence
- circuit design
- integrated circuit
- cooperative
- experimental data
- mathematical model
- optical flow
- pattern recognition
- high quality
- real time
- reliability assessment