A digital intensive circuit for low-frequency noise monitoring in 28nm CMOS.
Bertrand ParvaisPiet WambacqAbdelkarim MerchaDiederik VerkestAaron TheanKen SawadaKazuki NomotoTetsuya OishiHiroaki AmmoPublished in: A-SSCC (2015)
Keyphrases
- low frequency
- metal oxide semiconductor
- circuit design
- high frequency
- cmos technology
- frequency domain
- mixed signal
- low cost
- wavelet transform
- integrated circuit
- high speed
- low power
- silicon on insulator
- analog vlsi
- frequency band
- discrete wavelet transform
- subband
- electromagnetic fields
- wavelet analysis
- delay insensitive
- power dissipation
- power consumption
- frequency response
- nm technology
- high frequency components
- low pass
- cmos image sensor
- power supply
- multiresolution
- low voltage
- spatial domain
- wavelet coefficients
- fusion rules
- original images
- high resolution
- feature extraction