A 64Mb SRAM in 22nm SOI technology featuring fine-granularity power gating and low-energy power-supply-partition techniques for 37% leakage reduction.
Harold PiloChad A. AdamsIgor ArsovskiRobert M. HouleSteve LamphierMichael M. LeeFrank PavlikSushma N. SambaturAdnan SeferagicRichard WuMohammad Imran YounusPublished in: ISSCC (2013)