Optimization of the electrical properties of Al/a-SiC: H Schottky diodes by means of thermal annealing of a-SiC: H thin films.
L. MagafasJohn A. KalomirosD. BandekasG. TsirigotisPublished in: Microelectron. J. (2006)
Keyphrases
- electrical properties
- thin film
- film thickness
- silicon nitride
- high density
- room temperature
- optimization algorithm
- simulated annealing
- infrared
- grain size
- global optimization
- short circuit
- genetic algorithm
- annealing algorithm
- chemical vapor deposition
- low density
- optimization method
- multi view
- database
- single image
- three dimensional
- white light interferometry