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InAlN/GaN HEMTs on Si with 0.18-Ω•mm Contact Resistance and 2.1-A/mm Drain Current Density.

Yang JiangFangzhou DuZepeng QiaoWei-Chih ChengJiaqi HeXinyi TangFeifei LiuLei WenQing WangHongyu Yu
Published in: ASICON (2021)
Keyphrases
  • rms error
  • average error
  • cross section
  • maximum error
  • root mean square
  • data sets
  • clinical setting
  • metal oxide
  • neural network
  • information systems
  • image analysis