Impact of the collector region fabrication on electrical characteristics of HCBT structures in 180 nm BiCMOS technology.
Marko KoricicTomislav SuligojHidenori MochizukiSo-ichi MoritaKatsumi ShinomuraHisaya ImaiPublished in: MIPRO (2011)
Keyphrases
- silicon on insulator
- electrical properties
- cmos technology
- high speed
- rapid development
- integrated circuit
- low voltage
- dynamic characteristics
- high density
- data sets
- cost effective
- computer systems
- input image
- low power
- key technologies
- image structure
- image regions
- physical characteristics
- data processing
- case study
- complex structures
- mixed signal
- electrical power
- electron beam lithography
- metal oxide semiconductor