Ultra High Density SRAM Macro using 7nm FinFET Technology with Dual-Edge Driven Wordline/Bitline and Write/Read-Assist Circuit.
Yoshisato YokoyamaMiki TanakaKoji TanakaMasao MorimotoMakoto YabuuchiYuichiro IshiiShinji TanakaPublished in: VLSI Circuits (2020)
Keyphrases
- high density
- cmos technology
- low power
- high speed
- field effect transistors
- power consumption
- low density
- nm technology
- high power
- data center
- close proximity
- magnetic recording
- low voltage
- silicon on insulator
- thin film
- edge information
- read write
- cost effective
- chip design
- metal oxide semiconductor
- low cost
- high bandwidth
- parallel processing
- power dissipation
- circuit design
- power reduction
- image sensor
- edge detection
- real time
- power saving
- random access memory
- magnetic tape
- high throughput