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Quantum confinement effect in strained-Si1-xGex double-gate tunnel field-effect transistors.
Nguyen Dang Chien
Chun-Hsing Shih
Luu The Vinh
Nguyen Van Kien
Published in:
ICICDT (2013)
Keyphrases
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field effect transistors
schottky barrier
steady state
high density
mathematical analysis
leakage current
semiconductor devices
quantum computing
real world
artificial intelligence
optimal solution
particle swarm optimization
markov chain
simulation model