Electrical Performances of Insulated Gated Bipolar Transistor on Breakdown Voltage Corresponding to the Resulted Voltage due to the Applied Current Source.
Hsin-Chia YangKuo-Chin LoHsiu-Hsien YuChun-Yian ChangKun-Hong LiaoYu-Jung LiaoSung-Ching ChiPublished in: ICKII (2019)
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