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high-k/metal gate MOSFET device with oxygen post deposition annealing.

Chia-Wei HsuYean-Kuen FangWen-Kuan YehChun-Yu ChenYen-Ting ChiangFeng-Renn JuangChien-Ting LinChieh-Ming Lai
Published in: Microelectron. Reliab. (2010)
Keyphrases
  • field effect transistors
  • high density
  • high temperature
  • wide range
  • steady state
  • thin film
  • simulated annealing
  • mathematical analysis
  • grain size
  • portable devices
  • website
  • data acquisition